로딩중입니다.

  1. 커뮤니티

세미나 및 행사

[CiTE] 학과 세미나 안내 (김창현 부사장 / 삼성전기)

2014-04-16
  • 1352

창의IT융합공학과에서

삼성전기의 김창현 부사장을 모시고 학과 세미나를 갖고자 하오니,

많은 분들의 참여 부탁드립니다.

 연사: 김창현

부사장 (삼성전기)

 주제: Sustainable & Innovative

Great Company

 일시: 2014년

4월 17일(목) 16:00 ~ 17:30

 장소: 나노융합기술원 (NINT) 6층

창의공간

 초청자: 김재준 교수 (279-8861)


발표 내용:

In this talk, I will discuss the perspective of future industry in 21st

century along with the history of IT revolution. I will also talk about two

main requirements for the sustainable and innovative company: 1. how to train

soft and creative minded people who can quickly adjust to the dynamic

industry trend and 2. how to develop technology for profit while

maintaining strong corporate social responsibilities.


약력:

C.H. Kim (IEEE Fellow ‘11)

received a B.S. and an M.S. degree in electronics engineering from Seoul

National University, Seoul, Korea, in 1982 and 1984, respectively, and a Ph.D.

degree in electrical engineering from the University of Michigan, Ann Arbor,

USA in 1994.


In 1984, he joined Samsung Electronics Co., Ltd., Gyeonggi-do, Korea,

where he was involved in circuit design for high-speed dynamic RAM’s, ranging

from 64Kb to 16Mb in size. From 1989 until 1995, he was a research assistant

and research faculty with the center for Integrated Sensors and Circuits,

university of Michigan, USA.


In 1995, he rejoined Samsung Electronics and worked on high density Gigabit

commodity DRAM. His research interests were in the area of circuit design for

low-voltage and high-performance Giga-scale DRAM (RDRAM & DDR1/2/3) and

future high performance new DRAM architectures (DDR4, XDR, NMT, SBD, etc.),

ranging from 1GHz to 10GHz in speed.


In 2004 he was selected with honor as a Samsung Group Fellow for his

contribution in high performance DRAM development. From 2005 to 2009, he was in

charge of the Advanced Technology Development team for future-generation memory

developments including DRAM, NAND Flash, and all other new emerging memories

(Phase-change RAM, resistive RAM, Magnetic RAM). In 2009, he became head of the

memory product planning and application engineering team in order to promote

and create new memory solution products in various application areas and to

globally handle all technical problems related to memory in the fields.


In 2010, he moved to Samsung Electro-Mechanics (which produces all

electronic and mechanical components and modules) as CTO, being in charge of the

corporate R&D center and the manufacturing engineering institute. He was

also a chief of the CDS (Circuit Drive Solution) business division, which

mainly focuses on flat panel display power and wireless connectivity modules.

Now he is working at corporate product planning department and plans new future

electronics products of all business divisions.


He has been serving as a technical committee member/chair of several

international conferences; Symposium on VLSI Circuits, Asian Solid State

Circuits Conference, International Solid State Circuits Conference, and other

annual domestic and Samsung conferences. He has published about 140 technical

papers in semiconductor memory areas, received the Takuo Sugano awards for

outstanding far-east paper several times, and has issued around 50 patents. He

was nominated as an IEEE fellow in 2011.